The wide bandgap semiconductor silicon carbide (SiC) is a fascinating material. Our interest is in the electronic and chemical properties of field-effect devices. We have developed a catalytic gate hydrogen sensor with millisecond response at 600°C, capable of continuous operation for several months in a power plant. Our group is studying the hydrogen-mediated defect dynamics at interfaces in refractory metal/oxide/SiC field effect structures. Sensitive, rugged sensors capable of quantitatively monitoring the gaseous products of combustion systems are needed for reducing polluting emissions and improving energy efficiency.
