Most of my scientific research spans from semiconductor material science, including ultra-high vacuum technology, epitaxial growth, structural, electrical and optical characterizations, to the fabrication of devices such as light emitting diodes and transistors. My work on the description-comprehension of the epitaxial growth processes as well as the understanding-control of materials properties is driven with the aim of technological progresses in the electronic (powerful transistors for broadcast communications, etc.) and optoelectronics (energy savings) sectors.
I am currently particularly interested in the growth of rare earth nitride thin films by molecular beam epitaxy and their characterisations toward the implementation of a number of prototype device structures for spintronic applications. I am also interested in the growth and characterizations of rare-earth silicides which have a central role to play in the next-generation of CMOS devices (interconnects, contacts, source/drain area…)
