The Park group research focuses on the science and technology of nanomaterials. Our research is multidisciplinary; the group includes researchers with diverse backgrounds, including chemistry, physics, material science, and electrical engineering.
One main research goal is to build atomically-thin integrated circuitry. In order to build atomically thin integrated circuitry, we develop advanced growth, characterization and device fabrication methods for2D layered materials, which include electrically conducting graphene, insulating hBN and semiconducting transition metal dichalcogenides. For example, we reported the atom-resolution imaging of individual grain boundaries in graphene using transmission electron microscope (TEM) (Nature, 2011 [4]) and investigated their electrical properties (Science, 2012 [5]). We also developed a method for producing atomically thin lateral heterojuctions within individual 2D films (Nature, 2012 [6]), and reported the metal-organic chemical vapor deposition (MOCVD) growth of wafer-scale three-atom-thick semiconductor films with high mobility (Nature, 2015 [9]). Our results enable the fabrication of electrically isolated active and passive elements embedded in continuous, one- and few-atom-thick sheets, which could further be manipulated and stacked to form complex devices at the ultimate thickness limit.
